2SB1567 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
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2SB1567
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-100V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -2V, lc= -1A)
• Complement to Type 2SD2398
APPLICATIONS
• Designed for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
W
12
PIN LEASE
2.COLLECTOR
3. EMITTER
TO-220F package
Q
VCBO Collector-Base Voltage
-100
V
L ~-
-R
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-8
V
Ic
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25'C
PC
Collector Power Dissipation
@TC=25°C
Tj
Junction Temperature
-3
A
2
W
20
150
•c
Tstg
Storage Temperature
-55-150 "C
0
J --
N
mm
DIM MINI MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.40
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
q 2.70 ^2.90
R 2.20 2.40
s 2.65 2.85
u 6.40 6.60
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