2SB1566 Datasheet, PDF (1/2 Pages) Rohm – For Power Amplification (-60V, -3A)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
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FAX: [phone]
2SB1566
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -50V(Min)
• Low Collector Saturation Voltage-
: VCE(sa.)= -1 .OV(Max)@ (|c= -2A, IB= -0.2A)
• Wide Area of Safe Operation
• Complement to Type 2SD2395
1
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PIN 1. BASE
2. COLLECTOR
3.BU1ITTER
TO-22QFa package
APPLICATIONS
• Designed for power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25r
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
-60
V
-50
V
-5
V
-3
A
-4.5
A
2
W
25
150
•c
-55-150 'C
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1J L
mm
DIM WIN
A ¹⁶³⁵
B ^9.90
C 4.35
D 0.75
F 3.20
G 6.90
(-1 _3.70
MAX
17.15
10.10
4.65
0.80
3.40
7.10
3.90
J 0.45 0.75
K 13.35 13.65
L 1.10 ^1.30
N 4.9S 5.18
O 4^5 5.15
R 2.95 3^5
S 2.70 2.90
LI 1.75 2.05
tf 1.30 1.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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