2SB1507 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Current Switching Applications

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
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FAX: [phone]
2SB1507
DESCRIPTION
• Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@lc= -4A
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD2280
IH ^III
PIN 1BASE
| I|
2. COLLECTOR
III
3. EMITTER
'
TO-3PML package
APPLICATIONS
• Designed for relay drivers, high-speed inverters, converters.
Iks ^{-*. C}
ABSOLUTE MAXIMUM RATINGS(Ta=25 r )
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
Tc-25 C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-20
A
3
W
40
150
•c
-55-150
•c
22 -'J ^f
t Qi'd'.
_
(cf\
f
u
\~
i
A •:•
j
.:v^i ^•"»
Ji^d ^{vr_ IL',.".T t}
e^{4 .}\ ^{i - -}
it"H
•f
1k
1*-
.» .
•^i '^B Q
mm
DIM MIN MAX
A 19.90 20.10
B 15.90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.10
H 5.90 6.10
J 0.595 0.605
K 22.30 22.50
L 1.90 2.10
N 10.80 11.00
(J 4.90 5.10
R 3.75 3.95
S 3.20 3.40
LI 9.90 10.10
Y 4.70 4.90
Z 1.90 2.10
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
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