2SB1503 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification)

, One.
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: [phone]
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FAX: [phone]
2SB1503
DESCRIPTION
• High DC Current Gain-
: hFE= 5000(Min)@lc= -7A
• Low-Collector Saturation Voltage-
: VcE<satr -2.5V(Max.)@lc= -7A
• Complement to Type 2SD2276
APPLICATIONS
• Designed for power amplifier applications
• Optimum for 11OW HiFi output applications.
1 23
PIN 1.BASE
2. COLLECTOR
TO-3PL package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-160
V
VCEO ^{Collector-Emitter Voltage}
-140
V
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25°C
PC
Collector Power Dissipation
@ Ta=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-5
V
-7
A
-12
A
120
W
3.5
150
°C
-55-150
°c
mm
DIM MIN
A 25,50
B 19.80
C 4.50
D 0.90
E 2,30
F 2.40
G 10.80
H 3.10
J 0.50
K 20.00
N 3.90
P 2.40
q ^3.10
R 1.90
u 3.90
w 2.90
MAX
26.50
20 JO
5.50
1.10
JJO
2.60
11.00
S.30
0.70
21.00
4.10
2.60
3.50
2.10
4.10
3.10
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