2SB1495 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH POWER SWITCHING APPLICATIONS)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
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Silicon PNP Darlington Power Transistor
TELEPHONE: [phone]
[phone]
2SB1495
DESCRIPTION
• High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, lc= -2A)
• Low-Collector Saturation Voltage-
: VCE(satr -1.5V(Max.)@lc= -1.5A
• Complement to Type2SD2257
APPLICATIONS
• Designed for high power switching applications.
"2
™
123
f hs ~T~
R'
R2 1
•1 J
PIN 1.BA3E
2. COLLECTOR
3. EMITTER
TO-220F package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
B
0 o° °
F 0 •*- 0
It1 " ' " / " : . • ;
• C-
-S-
~^t ""^{^}r ' o ,~; o i *
•: v \ ' ^ } ' \
-.„'.';
IA
*•
i
t'
I
1*
t
* -T-H~-y-|-
VCEO
Collector-Emitter Voltage
-100
V
L--N:: < ^-R-
, . , . \\.
:
V£BO
Emitter-Base Voltage
-8
V
Ic
Collector Current-Continuous
-3
A
I CM
Collector Current-Pulse
-5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25'C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
-0.3
A
2
W
20
150
'C
Tstg
Storage Temperature
-55-150
'C
- -D
- N•
J --
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K _{13.4 13.6}
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
S 2.65 2.85
U 6.40 6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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