2SB1492 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification)

^E-ml-donauctoi LPioauati, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
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2SB1492
DESCRIPTION
• High DC Current Gain-
: hFE= 5000(Min)@lc= -5A
• Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@lc= -5A
• Complement to Type 2SD2254
APPLICATIONS
• Designed for power amplifier applications.
• Optimum for 60W HiFi output applications.
1 23
PIN 1.BASE
2. COLLECTOR
3.&1ITTER
TO-3PL package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-130
V
VGEO ^{Collector-Emitter Voltage}
-110
V
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25'C
PC
Collector Power Dissipation
@ Ta=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-5
V
-6
A
-10
A
70
W
3.5
150
°c
-55-150
•c
mm
DIM WIN
A ^25.50
B 19.80
C 4.50
D 0.90
E 2.80
F 2.40
G 10.80
H 3.10
J 0.50
K 20.00
N 3.90
P 2.40
Q ^3.10
R 1.90
U 3.90
W 2.90
MAX
26.50
20.20
5.50
1.10
3.20
2.60
11.00
3.30
0.70
21.00
4.10
2.60
330
2.10
4.10
3.10
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