2SB1490 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification)

J.E.IS.S.U
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SB1490
DESCRIPTION
• High DC Current Gain-
: hFE= 5000(Min)@lc= -6A
• Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@lc= -6A
• Complement to Type 2SD2250
APPLICATIONS
• Designed for power amplifier applications
• Optimum for SOW HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25X:)
SYMBOL
PARAMETER
VALUE
UNIT
VcBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC-25°C
PC
Collector Power Dissipation
@ Ta=25°C
Tj
Junction Temperature
-12
A
90
W
3.5
150
•c
Tstg
Storage Temperature Range
-55-150
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2.COLLECTOR
3.MITTER
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D
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mm
DIM WIN
A 25.50
B 19.30
C 4^0
D 0.90
b 2.80
F 2.40
G 10.80
H 3.10
J 0.50
K 20.00
N 3.90
P 2.40
Q ^3.10
R 1.90
U ^3.90
W 2.90
MAX
26.50
20.201
5^0
1.10
3JO
2.60
11.00
3.30
0.70
21.00
4.10
2.GO
330
2.10
4.10
3.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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