2SB1481 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (SWITCHING APPLICATIONS)

(Iziieu ^£.mi-(2onductoi ^-Pioducti, Una.
Ls
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
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2SB1481
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)cEo=-100V(Min)
• High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, lc= -1.5A)
• Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -6mA)
• Complement to Type 2SD2241
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications,
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
T2
W
!
123
. —lW' '
R
1 • fff_«—1_T^'_-
P N 1.BA3E
2. COLLECTOR
3.BMITTER
TO-220F package
B
__
- C-
. _p
p ,..} -'...-' r;_
ui°Q0
•-.-*"« ' '•
A
VCBO
Collector-Base Voltage
VCEO ^{Collector-Emitter Voltage}
-100
-100
V
•^ rt - >
i
. . '*
,
H
1 ~ ' ; j , , ' -R-
V
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
I CM
Collector Current-Pulse
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25'C
PC
Collector Power Dissipation
@TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
-5
V
-4
A
-6
A
-0.3
A
2
W
25
150
r
-55-150 •c
' "D
j-
• N-
mm
DIM MIN
A 14.95
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
Q 2.70
R 2.20
S 2.65
U 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
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