2SB1478 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

'J.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SB1478
DESCRIPTION
• High DC Current Gain-
: hFE=2000(Min)@lc=-2A
• Low Collector Saturation Voltage-
: VCE(Sat)= -2.0V(Max.) @lc= 5A
• Complement to Type 2SD2237
APPLICATIONS
• Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VcBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC-25'C
T.
Junction Temperature
Tstg
Storage Temperature Range
-8
A
60
W
150
•c
-55-150
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DIM MIN MAX
A 19.80 20.20
B 15,40 15.80
C 4.90 5.10
D 0.90 1.10
E 1.40 1.60
F 1.90 2.10
G 10.80 11.00
H 2.40 2.60
J 0.50 0.70
K 19.50 20.50
P 3.90 _4.10
Q 3.30 3.50
U 5.20 5.40
V 2.90 3.10
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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