2SB1477 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SB1477
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-100V(Min.)
• Wide Area of Safe Operation
• Complement to Type 2SD2236
APPLICATIONS
• Designed for driver and general purpose applications.
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PIN 1.BASE
2. COLLECT OR
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TO-247 package
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ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
VCBO Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-100
VEBO Emitter-Base Voltage
-5
Ic
Collector Current-Continuous
-5
Collector Power Dissipation
PC
@ TC=25'C
60
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55-150
UNIT
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DIM MINI MAX
A 19.80 20.20
B 15.40 15.80
C 4.90 5.10
D 0.90 1.10
E 1.40 1.60
F 1.90 2.10
G 10.80 11.00
H 2.40 2.60
J 0.50 0.70
K 19.50 20.50
P 3.90 4.10
Q 3.30 3.50
U 5.20 5.40
V 2JO 3.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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