2SA2151A Datasheet, PDF (1/2 Pages) Allegro MicroSystems – Audio Amplification Transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
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2SA2151A
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -230V(Min)
• Good Linearity of hFE
• Complement to Type 2SC6011
APPLICATIONS
• Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
-230
V
VCEO Collector-Emitter Voltage
-230
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-4
A
160
W
150
"C
-55-150 •c
1 23
tt
UQ
ft
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
-*-s
I U ^*
;
•
mm
DIM MIH MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1' ) 2.1i>
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
U 5.9Ift ^• i 10
Y I 9.9Ift 11».10
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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