2SA2151 Datasheet, PDF (1/2 Pages) Allegro MicroSystems – Audio Amplification Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA2151
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min)
• Good Linearity of HFE
• Complement to Type 2SC6011
APPLICATIONS
• Designed for audio and general purpose applications
./
1I
123
• ffl — '
ut
f
pX^
r^,
I
PIN 1.8ASE
2. COLLECTOR
3- EMITTER
TO-3PN package
-**-s
ABSOLUTE MAXIMUM RATINGS(Ta=25 C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-4
A
160
W
150
°C
-55-150 r
O
'- t
1 f ^{'ir :'r}
K
st
I
I
i
if yjf
ij u I
L! J U
Jv
--R
mm
DIM MM MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
6 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
q ^{4.90 5.10}
R 3.35 3.45
S 1.995 2.005
U 5.90 6.1 »
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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