2SA2140 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

'J
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Unc.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA2140
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-180V(Min)
• Good Linearity of hFE
APPLICATIONS
• Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
1
ppf
i
i
123
2
<
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220F package
.• • B
Q
t. •-*
F O '"""' O
,c -
» ^-a- H
* :*
U
! O ,": O
i
V__.'
-.»
A
', I _ •
L 4 -•• i : ^H
I ' ''•' I ' ¹
-R'-
K
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
ICP
Collector Current-Peak
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@TC=25BC
Tj
Junction Temperature
Tstg
Storage Temperature
-6
V
-1.5
A
-3
A
2
W
20
150
r
-55-150 •c
--o
- N-
J --
mm
DIM MIN
A 14.95
B 10.00
C 4,40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
q 2.70
R 2.20
S 2.65
U 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
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