2SA2121 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Power Amplifier Applications

I S.IIS.L
Cx
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA2121
DESCRIPTION
• High Current Capability
• High Power Dissipation
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -200V(Min)
• Complement to Type 2SC5949
APPLICATIONS
• Power amplifier applications
• Recommended for audio frequency amplifier output stage.
1 23
PIN 1.BASE
2.COLLECTOR
3. EMITTER
TO-3PL package
H!
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ Tc=25r
Tj
Junction Temperature
-1.5
A
220
W
150
'C
Tstg
Storage Temperature Range
-55-150 °c
mm
DIM MIN
A 25.50
B 19.30
C 4.50
D 0.90
E 2.80
F 2.40
G 10,80
H 3.10
J 0.50
K 20.00
N 3.90
P 2.40
Q ^3.10
R 1.90
LI 3.90
W 2JO
MAX
Ksa
20 JO
5,50
1.10
3.20
2.60
11.00
3.30
0.70
21.00
4.10
2.60
3.50
2.10
4.10
3.10
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