2SA1987 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

J.E.ii£.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA1987
DESCRIPTION
• High Current Capability
• High Power Dissipation
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min)
• Complement to Type 2SC5359
APPLICATIONS
• Power amplifier applications
• Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO ^{Collector-Base Voltage}
-230
V
VCEO Collector-Emitter Voltage
-230
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-1.5
A
180
W
150
•c
-55-1 50 •c
1 23
PIN 1.BASE
2.COLLECTOR
3. EMITTER
TO-3PL package
H
!**- j
mm
DIM WIN MAX
A 25,50 26^0
B 19.80 20JO
C 4.50 ^{5^0}
D 0.90 1.10
E 2^0 3JO
F 2.40 2j60
G 10.80 11.00
H 3.10 3JO
J 0.50 0.70
K 20:00 21.00
N 3.90 4.10
P 2.40 2.60
r i.9o ^{q 3,10 3^0}
R
2.10
u 3» ^4.10
W 2JO | 3,10
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