2SA1986 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA1986
DESCRIPTION
• High Current Capability
• High Power Dissipation
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min)
• Complement to Type 2SC5358
APPLICATIONS
• Power amplifier applications
• Recommend for SOW high fidelity audio frequency
amplifier output stage applications
i
1 23
PIN 1.BASE
2.COLLECTOR
3. EMITTER
TO-3PI package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-230
V
VCEO Collector-Emitter Voltage
-230
V
VEBO ^{Emitter-Base Voltage}
-5
V
Collector Current-Continuous
-15
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25'C
Junction Temperature
Utg
Storage Temperature Range
-1.5
150
w
150
"C
-55-150 •c
mm
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.40 4.60
D 0.90 1.10
F 3.20 3.40
H 2.90 3.10
J 0.50 0.70
K 19.90 ^20.10
L 1.90 2.10
N 10.80 11.00
Q 4.40 4.60
R 3.30 3.35
S 1.40 1.60
T 1.00 _1.20
U 2.10 2,30
z 8.90 9.10
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