2SA1962 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Jsiisu <~>£.mi-L.ond.uctoi lA-10ducts., Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Silicon PNP Power Transistor
2SA1962
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min)
• Good Linearity of hFE
• Complement to Type 2SC5242
APPLICATIONS
• Power amplifier applications
• Recommend for SOW high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
Tc-25 C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-1.5
A
130
W
150
°c
-55-150 •c
11
1'
• 23
3
PIN 1.BASE
2. COLLECTOR
3.BUIITTER
TO-SPf package
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DIM MIN MAX
A 19.90 20.10
B 15,50 15.70
C 4.40 4.60
D 0.90 1.10
F 3.20 3.40
H 2.90 3.10
J 0.50 0.70
K 19.90 ^20.10
L 1.90 2.10
N 10.80 11.00
U 4.40 4.60
R 3.30 3.35
S 1.40 1.60
T 1.00 _1.20
U 2.10 2.30
Z 8.90 9.10
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