2SA1943 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP PowerTransistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA1943
DESCRIPTION
• High Current Capability
• High Power Dissipation
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -230V(Min)
• Complement to Type 2SC5200
APPLICATIONS
• Power amplifier applications
• Recommend for 100W high fidelity audio frequency amplifier
output stage applications
1 23
PIN 1.BASE
2.COLLECTOR
3.&1ITTER
TO-3PL package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-1.5
A
150
W
150
'C
-55-150 •c
mm
DIM MIN
A 25,50
B 19.80
C 4.50
D 0.90
E 2.80
F 2.40
G 10.80
H 3.10
J 0.50
K 20JDO
N 3.90
P
2.40
q 3.10
R 1.90
u 3.90
w 2.90
MAX
26.50
20.20
5.50
1.10
3.20
2.60
11.00
3.30
0.70
21.00
4.10
2JBO
3^0
2.10
4.10
3.10
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