2SA1942 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA1942
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-160V(Min)
• Complement to Type 2SC5199
APPLICATIONS
• Power amplifier applications
• Recommend for SOW high fidelity audio frequency amplifier
output stage applications
1 23
PIN LEASE
2.COLLECTOR
3. BETTER
TO-3PL package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-160
V
VCEO Collector-Emitter Voltage
-160
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-1.2
A
120
W
150
r
-55-150 •c
D~H I*- i .
1 -IF Li
mm
DIM MIN MAX
A 25.50 ^26.50
B 19.80 20JO
C 4.50 ^5.50
D 0.90 1.10
E 2.80 3.20
F 2.40 ^2.60
G 10.80 11.00
H J.10 3.30
J OJO 0.70
K 20.00 21.00
N 3.90 4.10
P 2,40 2£0
q ^{3.10 3.50}
R 1.90 2.10
u 340 4.10
w 2.90 | l.*0
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