2SA1941 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

<zy\£.uj J.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Silicon PNP Power Transistor
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)=- 2.0V(Min) @lc=- 7A
• Good Linearity of hFE
• Complement to Type 2SC51 98
APPLICATIONS
• Power amplifier applications
• Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
-140
V
VCEO Collector-Emitter Voltage
-140
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@T.-25°r
Tj
Junction Temperature
Tstg
Storage Temperature Range
-1
A
100
W
150
°C
-55-150 •c
II \
3
2SA1941
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3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
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DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
F 1 90 2 10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
q 4.90 J 5.10
R 3.35 3.45
S 1.995 2.005
u 5.90 >.1 \
Y I 9.90 1<>.1
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