2SA1940 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Silicon PNP Power Transistor
2SA1940
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sa.)= -2.0V(Min) @lc= -6A
• Good Linearity of hFE
• Complement to Type 2SC51 97
APPLICATIONS
• Power amplifier applications
• Recommend for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
Tc=25 C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.8
A
80
W
150
•c
-55-150 °c
11
r*
23
2
PIN 1.BASE
2. COLLECTOR
3.BMITTER
TO-3PI package
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DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.40 4.60
D 0.90 1.10
F 3.20 3,40
H ^2.90 3.10
J 0.50 _0.70
K 19.90 20.10
L 1.90 2.10
N 10.80 11,00
U 4.40 4.60
H 3.50 3.35
S 1.40 1.60
T 1.00 _1.20
LI 2.10 2.30
Z 8.90 9.10
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