2SA1909 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: [phone]
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FAX: [phone]
2SA1909
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEo= -140V(Min)
• Good Linearity of HFE
• Complement to Type 2SC5101
1 23
PIN 1.BASE
2.COLLECTOR
3.B/IITTER
TO-3PML package
APPLICATIONS
• Designed for audio and general purpose applications
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ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-140
V
VCEO Collector-Emitter Voltage
-140
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-4
A
80
W
150
°C
-55-150 °c
;f
f
mm
DIM MM MAX
A 19.90 20.10
B 15.90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.10
H 5.90 6.10
J 0.59S 0.605
K 22.30 22.50
L 1.90 2.10
N 10.80 11.00
Q _4.90 5.10
R 3.75 3.95
S 3.20 3.40
0 9.90 10.10
Y 4.70 4.90
Z 1.90 2.10
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