2SA1908 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

J
Cs
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA1908
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V<BR)CEO=-120V(Min)
• Good Linearity of hF£
• Complement to Type 2SC5100
1 23
PIN 1.BASE
2. COLLECTOR
3. MITER
TO-3PML package
APPLICATIONS
• Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO ^{Collector-Emitter Voltage}
-120
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TG=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-3
A
75
W
150
-C
-55-150
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*-Q ¥ i ° '-'
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-*H-
-~i.~-0
N-—
mm
DIM WIN MAX
A 19,90 20.10
B 15,90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.10
H 5,90 6.10
J 0.595 0.605
K 22.30 22.50
L 1.90 ^2.10
N 10.80 11.00
Q _{4.90 5.10}
R 3,75 3.95
S 3.20 3.40
u 9.90 10.10
V 4.70 4.90
Z | 1.90 2.10
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