2SA1880 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – Switching Power Transistor(-10A PNP)

^zmi-L-onauctoi L/^ioaucta, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
2SA1880
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO<SUS)= -80(V)(Min.)
• Low Collector Saturation Voltage
:VCE(satr -0.3(V)(Max.)@lc= -5A
• Large Current Capability-lc= -10A
APPLICATIONS
• Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO ^{Collector-Emitter Voltage}
-80
V
VEBO Em itter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-1.5
A
IBM
Base Current-Peak
Total Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
-2
A
25
W
150
•c
Tstg
Storage Temperature Range
-55-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance,Junction to Case}
5
'CM/
1 23
PIN 1.BASE
2. COLLECTOR
3. EMITTER
rrO-220 package
mm
DIM MIN MAX
A 16.70 17.00
B 9,80 10.20
C 4.40 4.80
D 0.70 0.90
F 3.20 3.40
H 2.50 2.70
J 0.50 0.70
K 13.80 14.20
L 1.10 1.30
N 4.9* 6,18
Q 4.0O 4.40
R _2.60 2.80
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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