2N7052 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Darlington Transistor

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2N7052
2N7053
TO-92
TO-226
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
TA = 25:C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
Ic
Tj, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
100
12
1.5
-55 to +150
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2} These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
C
Thermal Characteristics TA = 25 C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
Rejc
Thermal Resistance, Junction to Case
ROJA
Thermal Resistance, Junction to Ambient
2N7052
625
5.0
83.3
200
Max
2N7053
1,000
8.0
125
50
*NZT7053
1,000
8.0
125
Units
mW
mW/0C
°C/W
"C/W
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