2N6931 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

^£,ml-L.onauctoi L/^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6931
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(susr 300(Min.)
• High Switching Speed
APPLICATIONS
• Off-line power supplies
• High-voltage inverters
• Switching regulators
Absolute maximum ratings(Ta=25c)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
(VBE=-1.5V)
VCEX Collector-Emitter Voltage
VCEO ^{Collector-Emitter Voltage}
VEBO ^{Emitter-Base Voltage}
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
IE
Emitter Current-Continuous
IEM
Emitter Current-peak
Collector Power Dissipation
PC
@Tc=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
450
V
350
V
300
V
8
V
10
A
15
A
5
A
7
A
15
A
22
A
150
W
150
r
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 0.83 •c/w}
f 1'
23
2
•-<
3
PIN 1.BASE
2. COLLECTOR
3. FITTER
TO-3PN package
ll- ,1 T^J
^
r^ u<a,y-_.^
it ^P
M_nM_;
K
'I'
|;
j
b
i
S^I
-,-h
|i '!
v UU
"•-R
mm
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
U 5.90 6.10
Y 9.90 10.10
Quality Semi-Conductors