2N6837 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

JEIIEU ^s.mi-L.onaucto'i L/^ioaucts., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Silicon NPN Power Transistor
2N6837
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
850
V
VcEO(SUS) ^{Collector-Emitter Voltage}
450
V
VEBO ^{Emitter-Base Voltage}
6
V
Ic
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
15
A
IBM
Base Current-Peak
20
A
PC
Collector Power Dissipation@Tc=25°C 250
W
Tj
Junction Temperature
200
'C
Tstg ^{Storage Temperature}
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX
0.7
UNIT
•c/w
3
I
PIN 1.BASE
•)
f
2. EMITTER
™S
3. COLLECT OR (CASE)
2
TO-3 package
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mm
DM MM MAX
A
39BO
8 2530 26j67
C 9-30 11.10
D 0.90 110
E
2.90 3.10
G
10.92
H
5.46
Jt H «0 13.50
16.75 17J05
N
18.40 ^19£2
0
4.00 4a)
u 30.09 ^{30^0}
^
4,30 450
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