2N6835 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

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Cs
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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FAX: [phone]
Silicon NPN Power Transistor
2N6835
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:VCEo(sus)=450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
850
V
VCEO(SUS) Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
6
A
IBM
Base Current-Peak
12
A
PC
Collector Power Dissipation@Tc=25'C
150
W
Tj
Junction Temperature
200
•c
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R(h j-c
Thermal Resistance.Junction to Case
MAX
1.17
UNIT
•c/w
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CAS E)
TO-3 package
! _{-•JU— D 2PL}
intn
DM MM MAX
A
3900
B ^{2S.30 26.67}
C
790 8.30
D 090 1.10
E 140 1.60
Q
tO.92
H
546
K 11 40 13.50
l 1675 170S
N 19.40 1962
q
4.00 4.20
u_v
30.00 ³⁰²⁰
4.30 450
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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