2N6834 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

<^/V
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6834
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)=450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCEV ^{Collector-Emitter Voltage}
850
V
Vceotsus) ^{Collector-Emitter Voltage}
450
V
VEBO ^{Emitter-Base Voltage}
6
V
Ic
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
8
A
PC
Collector Power Dissipation@Tc=25°C 125
W
Tj
Junction Temperature
200
r
Tstg
Storage Temperature
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R«i j-c ^{Thermal Resistance,Junction to Case}
1.4
"C/W
y
3
'-<
2
PIN 1.BASE
2. EMITTER
3. COLLECTOR (CASE)
TO-3 package
-• A
|— N-1
t
I
1, ~J— C
L
\m ^K
t ! ^V~\
/-'
T^N
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I
Jt—3-
;B
VijLS '
^33a
imn
DM 1m MAX
A^
39JOO
B 2!>.30 26J67
SL 3 ^{.90 8.30}
D (>.90 1 .10
E 1 40 1.60
G
10.92
H
546
K 11 .40 1350
L U575 17X6
N 1<i,40 19.62
0
..00 4.20
U 31y>p^ 3020
Â¥
< t.30 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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