2N6833 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
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2N6833
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
123
PIN 1.BASE
2.COLLECTOR
3.a/IITTER
TO-220C package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
850
V
VcEO(SUS) Collector-Emitter Voltage
450
V
VEBO
Ic
Emitter-Base Voltage
Collector Current-Continuous
6
V
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
8
A
PC
Collector Power Dissipation@Tc=25°C
80
W
Tj
Junction Temperature
150
•c
Tstg
Storage Temperature
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX
1.56
UNIT
•c/w
mm
DIM WIN
A 15.70
B 9.90
C 4.20
D 0.70
F 3.40
G 4.98
H 2.70
J 0.44
K 13.20
L 1.10
Q 2.70
R ^2.50
S 1.29
U 6.45
tf 8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
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notice. Information furnished by NJ Semi-Conductorsis believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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