2N6771 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6771/6772/6773
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= SOOV(Min)- 2N6771
= 350V(Min)- 2N6772
= 400V(Min)- 2N6773
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
2N6771
450
VCEV
Collector-Emitter Voltage
VBE=-1.5V
2N6772
550
V
2N6773
650
2N6771
300
VcEO(SUS) ^{Collector-Emitter Voltage 2N6772}
350
V
2N6773
400
VEBO ^{Emitter-Base Voltage}
8
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation@Tc=25°C 150
W
Tj
Junction Temperature
Tstg
Storage Temperature
200
"C
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX
1.17
UNIT
'C/W
3.
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
2
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mm
DM DM MAX
A
39 90
B 25.30 26.S7
C
780 8.30
D 090 1.10
E
140 1.60
G
10.9?
H
548
K 1140 13.50
L 1675 17XB
N 1S.40 19.82
Q
4.00 4.20
U 3000 ^J02Q
£ 430 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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