2N6769 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel Power MOSFETs, 12A, 450V/500V

20 STERN AVE.
SPRINQRELD, NEW JERSEY 07081
U.SA
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2N6769/2N6770
N-Channel Power MOSFETs,
12 A, 450 V/500 V
Description
These devices are n-ohannel, enhancement mode, power
MQSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
TO-204AA
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSSI vos(on), SOA and Va3(Ul) Specified at Elevated
Temperature
• Rugged
2N6769
2N6770
Maximum Ratings
Symbol
Characteristic
VDSS
VDGR
Drain to Source Voltage
Drain to Gate Voltage
Ros-1.0 Mil
VQS
Tj, T,|B
Gate to Source Voltage
Operating Junction and
Storage Temperatures
TL
Maximum Lead Temperature
for Soldering Purposes,
1/16" From Case for 10 s
Maximum On-State Characteristics
RDS(on) ^{Static Drain-to-Source}
On Resistance
ID
Drain Current
Continuous at Tc - 25°C
Continuous at Tc =» 100'C
IDM
Pulsed
Maximum Thermal Characteristics
R0JC Thermal Resistance,
Junction to Case
PD
Total Power Dissipation
at TO - 25°C
at TC-100*C
Linear Derating Factor
Rating
2N6770
500
500
±20
-55 to +150
300
0.4
12
4.75
252
0.83
150
60
1.2
Rating
2N6769
450
450
±20
-55 to +1SO
300
0.5
11
7.0
202
0.83
150
60
1.2
Unit
V
V
V
«c
°c
ft
A
°C/W
W
W/"C
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