2N6765 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel Power MOSFETs, 30A, 150V/200V

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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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2N6765/2N6766
N-Channel Power MOSFETs,
30 A,150 V/200 V
Description
Tries* devices are n-channel. enhancement mode, power
MOSFETs designed especially for high power, high sp«ed
applications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid driver and high
energy pulse circuits.
VQS Hated at ±80 V
Silicon Gate lor Fast Switching Sp«ed»
loss, RDs<an> Specified at Elevated Temperature)
Rugged
Low Drive Requirement*
Eaie of Paralleling
2N6765
2N6766
Maximum Rating*
Symbol
VDSS
VDGR
Vas
Tj, T8ts
TL
Characteristic
Drain to Source Voltage
Drain to Gate Voltage
Rss-1 MSI
Qate to Source Voltage
Operating Junction and
Storage Temperatures
Maximum Lead Temperature
tor Soldering Purposes,
1/16* From Case for 10 a
hating
2N8768
200
200
±20
-55 to +150
300
Maximum On-State Characteristics
fusion) ^{Static Drain-to-Source}
On Resistance
b
Drain Currant
Continuous at TC - 25°C
Continuous at Tc - loo'C
IOM
Pulsed
Maximum Thermal Characteristics
0.065
30
19
eo2
Rsuc
Thermal Resistance,
0.85
Junction to Case
PC
Total Power Dissipation
at Tc - 25'C
150
at Tc-100-C
60
Linear Derating Factor
1.2
Rating
2N6765
150
150
120
-55 to +150
300
0-12
25
16
SO2
0.83
150
60
1.2
Unit
V
V
V
•c
•c
Ji
A
•c/w
W
wrc
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