2N6763 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel Power MOSFETs, 38A, 60V/100V

<£E,ml-(2on
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6763, 2N6764
, Line.
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N-Channel Enhancement-Mode
Power MOS Field-Effect Transistors
3lAand38A, 60V-100V
r0s(on) = 0.08 O and 0.055 0
Features:
• SOA is power-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input Impedance
• Majority carrier device
The 2N6763 and 2N6764 are n-channel enhancement-mode
silicon-gate power MOS field-effect transistors designed
for applications such as switching regulators, switching
converters, motor drivers, relay driver;:, and drivers for
high-power bipolar switching transistors requiring high
speed and low gate-drive power. These types can be
operated directly from integrated circuits.
N-CHANNEL ENHANCEMENT MODE
92CS- 33741
TERMINAL DIAGRAM
TERMINAL DESIGNATION
MAXIMUM RATINGS, Absolute-Maximum Values:
' DRAIN-SOURCE VOLTAGE. Vw
' DRAIN-GATE VOLTAGE. Voa. (Roi = 20 fcfl)
' GATE-SOURCE VOLTAGE, VM
DRAIN CURRENT, I0, RMS Continuous
DRAIN CURRENT. IDM, Pulsed
................................
POWER DISSIPATION, PT
At Tc = 25' C
............................................
AtTc = 100"C
............................................
Above Tc - 25° C. Derate Linearly
.........................
INDUCTIVE CURRENT, lt«, Clamped (L •••- 100 ^H)
.............
OPERATING AND STORAGE TEMPERATURE, T,, T.,B .........
LEAD TEMPERATURE, Tc.
At distance! 0.063 in. (1.6 mm) from seating plane for 10 s max.
'JEDEC registered data.
2N4763
2N67M
60
100
60
100
.±20 .
31
38
20
24
60
70
150 .
.60 -
. 1.2 .
60
70
„ -55 to+150
. 300
V
V
V
A
A
A
W
W
W/°C
A
°C
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