2N6754 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

J.£ii£U
, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6754
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 500(Min.)
• High Switching Speed
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Off-line power supplies
• High-voltage inverters
• Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
1000
V
VcEX(SUS) Collector-Emitter Voltage
550
V
VcEO(SUS) Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@Tc=25'C
150
W
Tj
Junction Temperature
175
•c
Tstg
Storage Temperature
-65-200 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-c
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
"C/W
3
J
1
f
^|
2
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
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_i t
^A
TTV
^^
GB
f
^-oa ^{^XJV/'}
I1WI1
DM MM MAI
A
3900
B 2530 261i7
C
7.80 8:«
D 0.90 1 10
E 1.40 11iO
<L
10.92
H
546
K 1140 13.iiO
L 1675 171B
N 19.40 19*C
Q
400 4;»
U MOO 30-²⁰
V
4.30 4.iSO
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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