2N6753 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
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2N6753
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 500(Min.)
• High Switching Speed
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Off-line power supplies
• High-voltage inverters
• Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
900
V
VcEX(SUS)
Collector-Emitter Voltage
550
V
VCEO(SUS)
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@Tc=25°C
150
W
Tj
Junction Temperature
Tstg
Storage Temperature
175
°C
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX
1.0
UNIT
r/w
PIN
1.BASE
2, a/IITTER
3. COLLECT OR (CASE)
TO-3 package
II VII
DM MM MAX
A
3900
B 25,30 26*7
c
7.80 8.30
0 090 1.10
E
140 160
<S
10.92
H
546
K ^{11.40 1350}
L 1675 170S
H 13.40 1962
g
400 420
u 30 00 30.30
V
4.30 450
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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