2N6752 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

J.
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6752
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 450(Min.)
• High Switching Speed
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Off-line power supplies
• High-voltage inverters
• Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV Collector-Emitter Voltage
850
V
Vcex(sus) ^{Collector-Emitter Voltage}
500
V
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
1i
1I c
VcEO(SUS) ^{Collector-Emitter Voltage}
450
V
VEBO
Ic
Emitter-Base Voltage
Collector Current-Continuous
8
V
10
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@Tc=25"C 150
W
Tj
Junction Temperature
175
'C
Tstg
Storage Temperature
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX
1.0
UNIT
•c/w
iron
DM 104 MAX
ft
3900
cB 25.30 26*7
7.80 8.30
D 0.90 1.10
E 1.40 160
G
1092
H
S4S
K ^{11.40 13.50}
L 1675 1706
H 19.40 1962
g 400 420
u 30DO ³⁰²⁰
V 4.30 ⁴⁵⁰
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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