2N6751 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

J
(x
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6751
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 400(Min.)
• High Switching Speed
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Off-line power supplies
• High-voltage inverters
• Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
800
V
VcEX(SUS) ^{Collector-Emitter Voltage}
450
V
VcEO(SUS) ^{Collector-Emitter Voltage}
400
V
PIN
1.BASE
2. BullTTER
3. COLLECT OR (CAS E)
TO-3 package
t
«--- «
1
I^r
-*JU-D m
VEBO
Ic
ICM
IB
PC
Tj
Tstg
Emitter-Base Voltage
8
V
Collector Current-Continuous
10
A
Collector Current-Peak
10
A
Base Current-Continuous
5
A
Collector Power Dissipation@Tc=25°C
150
W
Junction Temperature
Storage Temperature
175
'C
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
'CM/
inm
DM UM MAX
A
3900
B 25.30 26*7
C ^7.ao 8.30
D 0.90 1 10
E
1.40 160
G
10.92
H
548
K ^{11.40 1350}
L 1675 1705
N 19.40 19.62
0
400 420
U 3000 ^30.20
v
4.30 4,50
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