2N6739 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N6739
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min)
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for use in high-voltage, high-speed , power switc-
hing in inductive circuit, they are particularly suited for 115
and 220V switchmode applications such as switching regu-
lators, inverters, DC-DC and converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV Collector-Emitter Voltage-VBE= -1.5V
550
V
VCEX Collector-Emitter Voltage-VBE= -1.5V
400
V
VCEO ^{Collector-Emitter Voltage}
350
V
VEBO Emitter-Base Voltage
8
V
IG
Collector Current-Continuous
I CM Collector Current-Peak
8
A
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
TC=25°C
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
4
A
100
W
150
•c
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-c ^{Thermal Resistance.Junction to Case}
MAX UNIT
1.25 •c/w
123
3
1.BASE
2.COLLECTOR
3. EMITTER
TO-220C package
mm
DIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R ^2.50 2.70
S 1.29 1.31
u 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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