2N6738 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,100W)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One.
Silicon NPN Power Transistor
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2N6738
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for use in high-voltage, high-speed , power switc-
hing in inductive circuit, they are particularly suited for 115
and 220V switchmode applications such as switching regu-
lators, inverters, DC-DC and converter.
123
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage-VBE= -1 .5V
450
V
VCEX
Collector-Emitter Voltage-VBE= -1 .5V
350
V
VCEO ^{Collector-Emitter Voltage}
300
V
VEBO
Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
TC=25'C
T,
Junction Temperature
Tstg
Storage Ttemperature Range
4
A
100
W
150
'C
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX UNIT
1.25 •c/w
T
SM
ES
mm
DIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 2.70
s 1.29 1.31
LJ 6.45 6.65
V 8.66 8.86
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