2N6689 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

flsiasu ^Efni-don
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Devices
2N6674
2N6675
, Line.
2N6689
2N6690
TELEPHONE: [phone]
[phone]
FAX: [phone]
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
<d>. TA = +25°C
(3>. Tc = +25°C(li
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance. Junction-to-Case
1) Derate linearly 1 .0 W/°C for Tc > 25°C
2) Derate linearly 34.2 mW/°C for TA - 25°C
3) Derate linearly 17. 1 mW/°C for TA > 25°C
Symbol
VCEO
VCBO
VCEX
VEBO
IB
Ic
PT
Top; Tstg
Symbol
Re:c
2N6674 2N6675
2N6689 2N6690
300
400
450
650
450
650
7.0
5.0
15
2N6674
2N667S
6.0<2)
175
2N6689
2N6690
3.0(3>
175
-65 to +200
Max.
1.0
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Ic = 200 mAdc
2N6674. 2N6689
2N6675. 2N6690
V(BR)CEO
Collector-Emitter Cutoff Current
VOE = 450 Vdc. VBE = -1.5 Vdc
2N6674. 2N6689
ICEX
VCE = 650 Vdc. VBE = - 1 .5 Vdc
2N6675. 2N6690
Unit
Vdc
Vdc
Vdc
Vdc
Adc ^{2N6674, 2N6675}
Adc ^TO-3
W
W
°C
Unit
°C/W
2N6689, 2N6690
TO-61*
* See Appendix A for Package
Outline
| Min. Max. Unit
300
Vdc
400
0.1
mAdc
0.1
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notice inrormation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
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