2N6576 Datasheet, PDF (1/2 Pages) General Semiconductor – 15 AMPERE NPN DARLINGTON POWER TRAN

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Una.
2N6576
2N6577
2N6578
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN SILICON POWER
DARLINGTON TRANSISTOR
TO-3
MAXIMUM RATINGS (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base CuTent
Continuous Emitter Current
Peak Emitter Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
"c
•CM
IB
'BM
IE
'EM
PD
Wstg
©JC
2N657§
60
60
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
2N6577
90
90
7.0
15
30
250
500
15.25
30.50
120
-65 to +200
1.46
2N6578
120
120
UNITS
V
V
V
A
A
mA
mA
A
A
W
°C
"C/VV
SYMBOL
"CBO
'CEV
>CER
•CEO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
nFE
nFE
hFE
hFE
TEST CONDITIONS
VCB=Rated VCBO
VCEV=Rated VCEO, VBE(off)=1 .5V
VCER= R«t«l VCEO. RBE=10k"- TC=1 50°c
VCE= Rated VCEO
Ic=200mA (2N6576)
lc=200mA (2N6577)
lc=200mA (2N6578)
lc=15A,lB=150mA
lc=1°A, lB=100mA
lc=15A, !B=150mA
VCE=3.0V, lc=400mA
VCE=3.0V, IC=4.0A
VCE=3.0V, IC=10A
VCE=4.0V, IC=15A
MIN
60
90
120
200
2000
500
100
MAX
500
5.0
5.0
1.0
2.8
4.0
3.5
4.5
20000
5000
UNITS
MA
mA
mA
mA
V
V
V
V
V
V
V
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