2N6544 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,125W)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The 2N6544 and 2N6545 transistors are designed for high-
voltage .high-speed, power switching inductive circuits where fall
time is critical.they are particularly, suited for 115 and 220 volt line
operated switch-mode applications such as:
* Switching Regulators
* PWM inverters and Motor Controls
* Solenoid and Relay Drivers
* Deflection Circuits
Specification Features-
High Temperature Performance Specified for: Reversed Biased SQA
with inductive loads Switching Times with Inductive Loads Saturation
Voltages, Leakage Currents.
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Collector current - Continuous
-Peak
Base current -Continuous
Emitter current - Continuous
-Peak
Total Power Dis*ipatJon@Tc=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vceo<*«)
VCEV
VEBO
"c
'CM
>a
>•
IEM
PO
TJ.TSTO
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance Junction to Case Rejc
2N6S44
300
2N6545
400
650
850
9.0
8.0
16
8.0
16
32
125
0.714
- 65 to +200
Max
1.4
FIGURE -1 POWER DERATING
X
x ^V.
^\
X,
^_X
) 25 50 75 100 125 150 175 200
T0 . TEMPERATURE(«C)
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NPN
2N6544
2N6545
8 AMPERE
NPN SILICON
POWER TRANSISTORS
300-400 VOLTS
125 WATTS
Unit
V
V
V
A
A
A
W
WV°C
°C
Unit
°c/w
TO-3
c
0
oT~lJ
JM-
PIN 1.BASE
2EMT1TER
COLLECTOR(CASE)
MILLIMETERS
DIM
MIN MAX
A 38.75 39.96
B 19.28 22.23
C
7.96 9.28
D 11.18 12.19
E 25.20 26.67
F
0.92 1.09
G
1.38 1.62
H 29.90 30.40
1 16.64 17.30
J
3.88 4.36
K 10.67 11.18
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