2N6542 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,100W)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SWTCHMODE SERIES
NPN SILICON POWER TRANSISTORS
These devices are designed for high-voltage,high-speed .power
switching inductive circuits where fall time is critical.they are particu-
larly, suited for 115 and 220 volt line operated SWITCHMODE appli-
cations such as:
* Switching Regulators
* PWM inverters and Motor Controls
* Solenoid and Relay Drivers
* Deflection Circuits
Specification Features-
High Temperature Performance Specified for: Reversed Biased SOA
with inductive loads Switching Times with inductive Loads Saturation
Voltages, Leakage Currents.
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Collector current - Continuous
-Peak
Base current - Continuous
Emitter current -Continuous
-Peak
Total Power DissipationeTc=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO(«us)
VCEV
VEBO
'c
'CM
IB
IE
'EM
PD
Tj |T8TO
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal ResistanceJunction to Case Rejc
2N6542
2N6643
300
400
650
850
8.0
5.0
10
5
10
20
100
0.57
- 65 to +200
Max
1.75
125
I _|100
I^
1 50
| 25
£
°C)
FIGURE -1 POWER DERATING
X- ^x
\x
\
<.
25 50 75 1OO 125 150 175 200
Tc , TEMPERATVJRE('C)
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN
2N6542
2N6543
5 AMPERE
NPN SILICON
POWER TRANSISTORS
300 - 400 VOLTS
100 WATTS
Unit
V
V
V
A
A
A
W
W/°C
°C
Unit
°c/w
TO-3
B
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A
PIN 1.BASE
2.EMTTTER
COLLECTOR(CASE)
MILLIMETERS
DIM
MIN MAX
A 38.75 3996
B 19.28 22.23
C
7,96 9.28
D 11.18 12.19
E 25.20 26.67
F
0.92
1 09
G
1.38
1.62
H 2990 3040
I 16.64 17.30
J
3.88 4.36
K 10.67 11.18
Qualify Semi-Conductors