2N6535 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device

i, Una.
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
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2N6535
DESCRIPTION
•With TO-66 package
•DARLINGTON
APPLICATIONS
•Power switching
Hammer drivers
Series and shunt regulators
Audio amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25a)
SYMBOL
PARAMETER
VcBO
VcEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
Ic
Collector current
ICM
Collector current-Peak
IB
Base current
PT
Total power dissipation
T,
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25L
VALUE
100
100
5
8
15
0.25
36
150
-65-150
UNIT
V
V
V
A
A
A
W
L.
L
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