2N6500 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

i., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
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FAX: [phone]
2N6500
DESCRIPTION
With TO-66 package
•Wide area of operation
•High sustaining voltage
APPLICATIONS
•For high-speed switching and linear-
amplifier applications
PINNING (See Flg.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25u)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
Ic
Collector current
I CM
Collector current-peak
IB
Base current
PT
Total power dissipation
T]
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25L
VALUE
120
90
7
4
5
3
35
150
-65-200
UNIT
V
V
V
A
A
A
W
L
L
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-c
Thermal resistance junction to case
MAX
5.0
UNIT
L/W
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