2N6497 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,80W)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
£Pioauct±, LJna.
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HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
... designed for high voltage inverters, switching regulators and line operated
amplifier applications.
FEATURES:
* Collector-Emitter Sustaining Voltage-
VCIO_™ « 250 V (Min) -2N6497
= 300 V (Min) -2N6498
= 350 V (Min) -2N6499
* DC Current Gain
hFE = 10-75 Q IC=2.5A
MAXIMUM RATINGS
Characteristic
Symbol 2N6497 2N6498 2N6499 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
VCEO
250
300
350
V
VCBO
350
400
450
V
VEBO
6.0
V
«c
5.0
A
10
Base Current
'a
Total Power DlsslpatlontSTc = 25°C _po
Derate above 25°C
2.0
A
80
W
0.64
W/°C
Operating and Storage Junction
°C
Temperature Range
TjT«-
-65 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance Junction to Case Rejc
1.56
Unit
°C/W
80
& 70
|60
| 50
1 *°
1 30
i 20
* 10
a
"• o
G
FIGURE -1 POWER DERATING
"v
\.
\
X
V
\5 50
Tc , TEMPERATURE(»C)
NPN
2N6497
2N6498
2N6499
5 AMPERE
POWER TRANSISTORS
250-350 Volts
80 Watts
TO-220
Y'
r L ^{^ i_ 12 3}
''ff
L—IF jt'
PIN .BASE
Z.COLL6CTOR
J.EMITTER
1 COLLECTOR(CASE)
MILLIMETERS
DIM
MIN MAX
A 14.68 1531
B
978 10.42
C
501 652
D 1306 14.62
E
3.57
4.07
F
2.42 3.66
G
1.12 136
H
0.72 0.96
4.22 4.98
J
1.14 1.38
K
2.20 2.97
75
L
M
100
02..3413625
02..5915850
3.70 3.90
i
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not,ce ,ntonnat.on tum.shcd by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goTng to
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