2N6436 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W)

i, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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HIGH-POWER PNP SILICON TRANSISTORS
... designed for use in industrial power amplifiers and switching
circuit applications.
FEATURES:
* High DC Current Gain
hFE=20-80©lc=10A
=12 (Min)®lc=25A
* Low Collector-Emitter Saturation Voltage
VCBSATI • 1 -0V (Max.) @ lc = 10 A, IB = 1 .OA
* Complement to 2N6338 thru 2N6340
MAXIMUM RATINGS
Characteristic
Symbol 2N6436 2N6437 2N6438 Unit
PNP
2N6436
2N6437
2N6438
25 AMPERE
POWER TRANSISTOR
PNP SILICON
80-120 VOLTS
200 WATTS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
VCEO
VCBO
VEBO
•c
Base Current
'B
Total Power Dissipation @TC=25°C _PD
Derate above 25°C
Operating and Storage Junction
Temperature Range
Tj 'TaTQ
80
100
120
100
120
140
6.0
25
50
10
200
1.14
-65 to +200
V
V
V
A
A
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance Junction to Case Rejc
Max
0.875
Unit
°c/w
TO-3
f
I
J ^{-^ ~l}
Dl
H
1
A J _{\ X1 2} "X
f
>
<£) JK |E
1,
A
200
§175
|150
2 125
|100
1 75
i^
& 25
)
FIGURE -1 POWER DERATING
x\
N_s
X_x
X _s.
X
N
25 50 75 100 125 150 175 200
Tc , TEMPERATUREC'C)
PIN 1.BASE
2.EMTTTER
COLLECTOR (CASE)
MILLIMETERS
MIN MAX
A 38.75 39.96
B 19.28 22.23
C
7.96 9.28
D 11.18 12.19
E 2520 26.67
F
092 1.09
G
1.38 1.62
H 2990 30.40
I 16.64 17.30
J
3.sa 4.36
K 10.67 11.18
I