2N6358 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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Silicon NPN Power Transistors
DESCRIPTION
•With TO-3 package
•High DC current gain
•DARLINGTON
2N6358
APPLICATIONS
•For general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
Ic
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
'stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25_
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R|h|-c
Thermal resistance junction to case
VALUE
80
60
5
20
0.5
150
200
-65-200
UNIT
V
V
V
A
A
W
VALUE
1.09
UNIT
/W
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