2N6132 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

<£zmi-Condu.ckoi Lpioaiicti., Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
u SA
Silicon PNP Power Transistors
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2N61322N61332N6134
DESCRIPTION
•With TO-220 package
•High power dissipation
•Complement to NPN type :
2N61292N61302N6131
APPLICATIONS
•Power amplifier and medium speed
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
B CE
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6132
VCBO
Collector-base voltage 2N6133
2N6134
2N6132
VCEO
Collector-emitter voltage 2N6133
2N6134
VEBO
Emitter-base voltage
Ic
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
' stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25
VALUE
-40
-60
-80
-40
-60
-80
-5
-7
-3
50
150
-65-150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rthj-c
Thermal resistance from junction to case
2.5
/W
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